Direct measurement and analysis of the conduction band density of states in diluted GaAs1−xNx alloys

نویسندگان

  • L. Ivanova
  • H. Eisele
  • M. P. Vaughan
  • Ph. Ebert
  • A. Lenz
  • R. Timm
  • O. Schumann
  • L. Geelhaar
  • M. Dähne
  • S. Fahy
  • H. Riechert
  • E. P. O’Reilly
چکیده

L. Ivanova,1 H. Eisele,1,* M. P. Vaughan,2 Ph. Ebert,3 A. Lenz,1 R. Timm,1 O. Schumann,4,5 L. Geelhaar,4,6 M. Dähne,1 S. Fahy,2,7 H. Riechert,4,6 and E. P. O’Reilly2 1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany 2Tyndall National Institute, Lee Maltings, Cork, Ireland 3Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany 4Infineon Technologies AG, 81730 München, Germany 5Carl Zeiss SMT AG, 73447 Oberkochen, Germany† 6Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany† 7Department of Physics, University College Cork, Cork, Ireland Received 14 September 2010; published 7 October 2010

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تاریخ انتشار 2010